IRGBC30K Short Circuit Rated UltraFast IGBT
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Equivalent: IRG4BC30UD
Features/Specs:
- Collector-to-Emitter Voltage: 600V
- Continuous Collector Current: 23 @25°C
- Continuous Collector Current: 14A @100°C
- Pulsed Collector Current: 46A
- Clamped Inductive Load Current: 46A
- Gate-to-Emitter Voltage: ±20V
- Short Circuit Withstand Time: 10µs
- Reverse Voltage Avalanche Energy: 10 mJ
- Optimized for high operating frequency (over 5kHz)
- Short circuit rated – 10µs @ 125°C, V GE = 15V
- Maximum Power Dissipation: 100 Watt @25°C
- Maximum Power Dissipation: 42 Watt @100°C
- Operating Junction and Storage Temperature Range: -55 ~ +150°C
- Package: TO-220AB
Package Includes:
- 1 x IRGBC30K Short Circuit Rated UltraFast IGBT
Datasheet: IRFG4BC30UD
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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