IRG4BC30UD 600V 8-60 kHz IGBT
An insulated-gate bipolar transistor is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs. It is optimized for specific application conditions. The generation 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.
Equivalent:IRGBC30K
Features/Specs:
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Collector-to-Emitter Voltage: 600V
- Continuous Collector Current: 13A @25°C
- Continuous Collector Current: 6.5A @100°C
- Pulsed Collector Current: 52A
- Clamped Inductive Load Current: 52A
- Diode Continuous Forward Current: 7 @100°C
- Diode Maximum Forward Current: 52A
- Gate-to-Emitter Voltage: ±20V
- Maximum Power Dissipation: 60W @25°C
- Operating Junction and Storage Temperature Range: -55 ~ +150°C
- Package: TO-220AB
Package Includes:
- 1 x IRG4BC30UD 600V 8-60 kHz IGBT
Datasheet:Â IRFG4BC30UD
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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