IRFR120NTRPBF- 100V 9.4A N Channel Power Mosfet – TO-252 SMD Package
The FR120N is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with a low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching, and general-purpose applications.
Features/Specs:
- Part No: IRFR120NTRPBF
- Manufacturer: Infineon Technologies
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100 V
- Current – Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3 (DPAK)
Datasheet: IRFR120NTRPBF
Package Includes:
- 1 x IRFR120NTRPBF- 100V 9.4A N Channel Power Mosfet – TO-252 SMD Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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