These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features/Specs:
- N-Channel
- 48A, 500V, RDS(on) = 0.105ohm @VGS = 10 V
- Low gate charge ( typical 105 nC)
- Low Crss ( typical 45 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Note: Product Images are shown for illustrative purposes only and may differ from actual product
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