IRF630N – 200V 9A N-Channel Power Mosfet – TO-220 Package
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to pproximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Tags, IRF630 Equivalent MOSFETs: IRF630 can be replaced by IRFS630, IRFS631, IRF630PBF, IRF640, IRF640PBF, IRF644, IRFB17N50L, IRF630,511-IRF630.
Features:
- Extremely high dv/dt capability
- Fast switching
- Low intrinsic capacitance
- Ease of paralleling
- Gate charge minimized
- Simple drive requirement
Features/Specs:
- Manufacturer Part No: IRF630N
- Manufacturer: Infineon Technologies
- Series: IRF630
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 200V
- Continuous Drain Current: 9A
- Drain-Source Resistance: 400 mOhms
- Gate-Source Voltage: -20V to +20V
- Gate-Source Threshold Voltage: 2V
- Gate Charge: 31 nC
- Operating Temperature Range: -65°C ~ +150°C
- Power Dissipation: 75 Watt
- Channel Mode: Enhancement
- Configuration: Single
- Forward Transconductance: 3S
- Rise Time: 15 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Application:
- Solar power supply application
- Motor drivers
- Battery charger
- Telecommunication applications
- High-speed switching applications
- Power management
- Portable devices
Datasheet: IRF630N
Package Includes:
- 1 x IRF630N – 200V 9A N-Channel Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product
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