irfz44vs-power-mosfet-transistor-to-263
Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Features/Specs:
- Manufacturer: Infineon
- Manufacturer Part No: IRFZ44VZSPBF
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 60V
- Continuous Drain Current: 57A
- Drain-Source Resistance: 9.6 m Ohms
- Gate-Source Voltage: -20V ~ +20V
- Gate-Source Threshold Voltage: 4V
- Power Dissipation: 92 W
- Gate Charge: 43 nC
- Channel Mode: Enhancement
- Configuration: Single
- Rise Time: 62 ns
- Fall Time: 38 ns
- Transistor Type: 1 N-Channel
- Typical Turn-Off Delay Time: 35 ns
- Typical Turn-On Delay Time: 14 ns
- Minimum Operating Temperature: -55°C
Maximum Operating Temperature: +175°C - Mounting Style: SMD/SMT
- Package/Case: TO-263-3
Applications:
- Switching high power devices
- Control speed of motors
- LED dimmers or flashers
- High Speed switching applications
- Converters or Inverter circuits
Datasheet: IRFZ44VS
Package Includes
- 1 x IRFZ44VZS N Channel Power Mosfet Transistor – TO-263-3 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product.
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