IRF5305 – 55V/31 Amp P-Channel Power MOSFET – TO-220 Package
Benefit, combined with the fast switching speed and ruggedized device design, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF5305 fifth-generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Featured by Sharvi Electronics This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features/Specs:
- Part No: IRF5305
- Manufacturer: Infineon Technologies
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 55 V
- Id – Continuous Drain Current: 31 A
- Pd – Power Dissipation: 110 W
- Rds On – Drain-Source Resistance: 60 mOhms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Vgs th – Gate-Source Threshold Voltage: 4 V
- Qg – Gate Charge: 42 nC
- Operating Temperature Range: -55~175°C
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Package / Case: TO-220-3
Datasheet: IRF5305
Package Includes:
- 1 x IRF5305 – 55V/31 Amp P-Channel Power MOSFET – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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