2SC3356 – 12V 100mA NPN Microwave Low-Noise Transistor – SOT-23 Package
NPN transistor in unencapsulated chip form. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. The device is a direct replacement for the obsolete NE85600 or NE85633 and is also functionally similar to BFR96. Closest available PNP complement is BFT92
Features/Specs:
- Transistor Type: NPN
- Collector to Base Voltage VCBO: 20V
- Collector to Emitter Voltage VCEO: 12V
- Emitter to Base Voltage VEBO: 3.0V
- Collector Current IC: 100 mA (Max)
- Storage Temperature: -65 to +150℃
- Operating Temperature: 150°C
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
Datasheet:
Package Includes:
- 1 x 2SC3356 – 12V 100mA NPN Microwave Low-Noise Transistor – SOT-23 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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