BSS123 MOSFET – N-Channel Enhancement Mode MOSFET – SMD SOT-23 Package
The BSS123 is N channel logic level enhancement mode field effect transistor in the SOT-23 package. This product is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance thus BSS123 is suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features/Specs:
- Part No: BSS123
- Manufacturer: ONSEMI
- Product Category: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Voltage: 100V
- Gate-Source Voltage: ± 20V
- Drain Current Continuous: 170mA
- Rds On – Drain-Source Resistance: 1.2 Ohms
- Power Dissipation: 360mW
- Configuration: Single
- Operating Temperature: – 55°C ~ +150°C
- Package/Case: SOT-23
- Height: 1.2 mm
- Length: 2.9 mm
Datasheet: BSS123
Package Includes:
- 1 x BSS123 MOSFET – N-Channel Enhancement Mode MOSFET – SMD SOT-23 Package
Note: Product images are shown for illustrative purposes only and may differ from the actual product.
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