IRF820 – 500V 2.5A N-Channel Power MOSFET – TO-220 Package
IRF820 – 500 V / 2.5 Amp N-Channel Power MOSFET, The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. IRF820 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features/Specs:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 500V
- Continuous Drain Current: 2.5A
- Drain-Source Resistance: 3Ohms
- Gate-Source Voltage: 20V
- Gate Charge: 17nC
- Operating Temperature Range: -65~150°C
- Power Dissipation: 50W
- Mounting Style: Through Hole
- Package: TO-220
Datasheet: IRF820
Package includes:
- 1 x IRF820 – 500V 2.5A N-Channel Power MOSFET – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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