SI2304DDS-T1 – 30V 3.3A N-Channel Mosfet – SOT-23 Package
ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management, other battery-powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. This product is known as SI2304, 2304, 2304 N-Channel Mosfet, SI2304DDS-T1-GE3 Mosfet N-Channel, SI2304DS N-Channel Mosfet.
Features/Specs:
- Manufacturer: Vishay Siliconix
- Manufacturer Part No: SI2304DDS-T1-GE3
- Polarity: N-Channel
- Drain to Source Voltage: 30V
- Current – Continuous Drain: 3.3A
- Drive Voltage: 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Gate-Source Voltage: ±20V
- Input Capacitance: 235pF @ 15V
- Power Dissipation: 1.1W
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package/Case: SOT-23-3
Applications:
- Low Side Load Switch
- Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
- Buck Converters
- Level Shifts
Datasheet: SI2304DDS-T1 – 30V 3.3A N-Channel Mosfet – SOT-23 Package
Package Includes:
- 1 x SI2304DDS-T1 – 30V 3.3A N-Channel Mosfet – SOT-23 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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