MJE3055T – 60V 10A NPN Complementary Silicon Power Transistor – TO-220 Package
MJE3055T NPN Power Transistor 60V 10A – TO-220 Package. These power transistor devices are designed for use in general-purpose amplifier and switching applications. MJE3055T is a general-purpose NPN power transistor manufactured with the epitaxial base process and mounted in a hermetically sealed metal case. This device is designed for general purpose switching and amplifier applications. This product is known as MJE3055, MJE3055 NPN Power Transistor, MJE3055 Power Transistor, MJE3055 Transistor,MJE3055T NPN Power Transistor, MJE3055T Power Transistor, MJE3055T Transistor.
Features/Specs:
- Manufacturer Part No: MJE3055T
- Manufacturer: STMicroelectronics
- Product Type: BJTs – Bipolar Transistors
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage: 60V
- Continuous Collector Current: 10A
- Collector- Base Voltage: 70V
- Emitter- Base Voltage: 5V
- Collector-Emitter Saturation Voltage: 1.1V
- Maximum DC Collector Current: 10A
- Power Dissipation: 75W
- Gain Bandwidth Product: 2 MHz
- DC Collector/Base Gain: 20
- Operating Temperature Range: -55°C ~ +150°C
- Mounting Style: Through Hole
- Package / Case: TO-220-3
Applications:
- Power switching circuits
- Amplifier circuits
- PWM applications
- Regulator circuits
- Switch-mode power supply
- Signal Amplifiers
Datasheet: MJE3055T
Package Includes:
- 1 x MJE3055T – 60V 10A NPN Complementary Silicon Power Transistor – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product
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