LZP65N06P N-Channel 60V 65A Power Mosfet – TO-220 Package
LZP65N06P N-Channel 60V 65A Power Mosfet Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB.
Features:
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- High di/dt Capability
- Improved Gate Charge
- Wide Expanded Safe Operating Area
Features/Specs:
- Manufacturer: Lite-On Semiconductor
- Manufacturer Part No: LZP65N06P
- Product Type: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Voltage: 60V
- Gate-Source Voltage: ±20V
- Continuous Drain Current: 65A
- Pulsed Drain Current: 260 A
- Power Dissipation TC=25℃
- Operating Junction and Storage Temperature Range: -55 to 175 ℃
- Avalanche Energy with Single Pulse: 230
- Peak Diode Recovery dv/dt (3) dv/dt: 10
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Applications:
- DC-DC Converters
- UPS & Monitors
- High Power Switching
Datasheet: LZP65N06P
Package includes:
- 1 x LZP65N06P N-Channel 60V 65A Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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