IRFP4668 N-Channel Power MOSFET – TO-247 Package
Improved Gate, Avalanche and Dynamic dV/dt, ruggedness, fully Characterized Capacitance, and Avalanche SOA, enhanced body diode dV/dt and dI/dt Capability, Lead-Free
Features/Specs:
- Part No: IRFP4668
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 200 V
- Id – Continuous Drain Current: 130 A
- Rds On – Drain-Source Resistance: 9.7 mOhms
- Vgs – Gate-Source Voltage: – 30 V, + 30 V
- Vgs th – Gate-Source Threshold Voltage: 1.8 V
- Qg – Gate Charge: 161 nC
- Minimum Operating Temperature: – 55 C
- Maximum Operating Temperature: + 175 C
- Pd – Power Dissipation: 520 W
- Mounting Style: Through Hole
- Package/Case: TO-247-3
Datasheet: IRFP4668 Datasheet
Package includes:
- 1 x IRFP4668 N-Channel Power MOSFET – TO-247 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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