IRFP460-N-Channel MOSFET
The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It has an isolated mounting hole. It also provides a greater creepage distance between pins. IRFP460 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Featured by Sharvi Electronics This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features/Specs:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 500V
- Continuous Drain Current: 20A
- Drain-Source Resistance: 0.24Ohms
- Gate-Source Voltage: 30V
- Gate Charge: 124 nC
- Operating Temperature Range: -55~150°C
- Power Dissipation: 280W
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Package: TO-247
Package includes:
- 1 x IRFP460-N-Channel MOSFET
Datasheet: IRFP460
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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