IRFP2907 – 75V 209A N-Channel Power Mosfet – TO-247 Package
The IRFP4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and PULSE rating. 175°C Operating temperature, Low QG for fast response, High repetitive peak current capability for reliable operation, Shortfall and rise times for fast switching, Repetitive avalanche capability for robustness and reliability. This product is known as 209A MOSFET, 75V 209A N Channel Power MOSFET, 75V MOSFET, Component, IRFP2907, IRFP2907 75V 209A N Channel Power MOSFET, IRFP2907 MOSFET, MOSFET, N Channel Power MOSFET, Power MOSFET.
Benefits
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Features/Specs:
- Manufacturer Part No: IRFP2907PBF
- Manufacturer: Infineon Technologies
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 75V
- Continuous Drain Current: 209A
- Drain-Source Resistance: 4.5 mOhms
- Gate-Source Voltage:: -20V ~ +20V
- Gate-Source Threshold Voltage:: 1.8 V
- Gate Charge:: 410 nC
- Operating Temperature: -55°C ~ +175°C
- Power Dissipation: 330W
- Configuration: Single
- Fall Time: 130 ns
- Rise Time: 190 ns
- Transistor Type: 1 N-Channel
- Typical Turn-Off Delay Time: 130 ns
- Typical Turn-On Delay Time: 23 ns
- Mounting Style: Through Hole
- Package/Case: TO-247-3
Applications:
- Power Management
- Industrial
Datasheet: IRFP2907 – 75V 209A N-Channel Power Mosfet – TO-247 Package
Package Includes:
- 1 x IRFP2907 – 75V 209A N-Channel Power Mosfet – TO-247 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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