IRF9610 – 200V 1.8A P-Channel Power Mosfet – TO-220 Package
The power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features:
- Dynamic dV/dt rating
- P-channel
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for d
Features/Specs:
- Manufacturer Part No: IRF9610
- Manufacturer: Vishay
- Drain to Source Voltage: 200V
- Current – Continuous Drain: 1.8A
- Drive Voltage: 10V
- Rds On (Max) @ Id Vgs: 3Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Power Dissipation: 20W
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package/Case: TO-220-3
Datasheet: IRF9610
Package Includes:
- 1 x IRF9610 – 200V 1.8A P-Channel Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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