IRF540NPBF N-Channel HEXFET Power MOSFET TO-220 Package
The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features/Specs:
- Part No: IRF540NPBF
- Manufacturer: Infineon Technologies
- Drain to Source Voltage (Vdss): 100 V
- Current – Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Compliant to RoHS directive 2002/95/EC
Datasheet: IRF540-N-Channel MOSFET
Package Includes:
- 1 x IRF540NPBF N-Channel HEXFET Power MOSFET TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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