An insulated-gate bipolar transistor is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
Features/Specs:
- Very low VCE(sat) 1.5V (typ.)
- Maximum Junction Temperature 175 deg C
- Short circuit withstand time 5 us
- Positive temperature coefficient in VCE(sat)
- Low EMI
- Pb-free lead plating; RoHS compliant
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