The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. IGBTs combine the best features of MOSFETs and bipolar transistor.
- 43A, 1200, Tc=25 deg C
- 1200V Switching SOA Capability
- Typical Fall Time: 340ns @ Tj = 150 deg C
- Short Circuit Rating
- Low conduction Loss
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