4N60 – 600V 4A N-Channel Power Mosfet – TO252 DPAK Package

4N60 – 600V 4A N-Channel Power Mosfet – TO252 DPAK Package

The 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This power MOSFET is usually used at high-speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters, and bridge circuits. This product is known as N-Channel Power Mosfet, 4N60 Mosfet, 4N60 N Channel Mosfet, 4N60 N Channel Power Mosfet, 4N60C, 4N60 (4A 600V) TO252 (DPAK) N-CH MOSFET

Features:

• RDS(ON) ≤ 2.5 Ω @ VGS = 10 V, ID = 2.2A
• Fast Switching Capability
• Avalanche Energy Specified
• Improved dv/dt Capability, high Ruggedness

Features/Specs:

• Part No: 4N60
• Transistor Polarity: N-Channel
• Drain-Source Voltage: 600V
• Gate-Source Voltage: ±30V
• Avalanche Current: 4.4 A
• Drain Current: 4A
• Power Dissipation: 50 Watt
• Operating Temperature: -55 ~ +150°С
• Drain-Source Leakage Current: 10uA
• Gate-Source Leakage Current: 100nA
• Package: TO252 (DPAK)

Datasheet: 4N60 – 600V 4A N-Channel Power Mosfet – TO252 DPAK Package 

Package Includes:

• 1 x 4N60 – 600V 4A N-Channel Power Mosfet – TO252 DPAK Package