2SK2601 – 500V 10A N-Channel High Voltage Power Mosfet – 2-16C1B Case
2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z L. Features. usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) Tags, 2SK2601, K2601, 2601, N-Channel Mosfet, 500V N-Channel Mosfet, 10A N-Channel Mosfet.
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Features:
- Low Drain Source ON-Resistance : RDS (ON) = 0.56 Ω
- High Forward Transfer Admittance : |Yfs| = 7.0 S
- Low Leakage Current : IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement Mode: = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Features/Specs:
- Manufacturer Part No: 2SK2601
- Manufacturer: TOSHIBA
- Drain Source Voltage: 500V
- Drain Gate Voltage: 500V
- Gate Source Voltage: ±30V
- Drain current Range: DC (Note 1) ID 10A, Pulse (Note 1) IDP 40A
- Drain Power Dissipation: 125 Watts
- Single Pulse Avalanche Energy: 270 mJ
- Avalanche Current: 10A
- Repetitive Avalanche Energy: 12.5 mJ
- Channel Temperature: 150°C
- Mounting Style: Through Hole
- Package/Case: 2-16C1B
Applications:
- DC−DC Converter
- Relay Drive Controller
- Motor Drive
Datasheet: 2SK2601
Package Includes:
- 1 x 2SK2601 – 500V 10A N-Channel High Voltage Power Mosfet – 2-16C1B Case
Note: Product Images are shown for illustrative purposes only and may differ from the actual product
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