SI2366DS-T1-GE3 – 30V 5.8A N-Channel Mosfet – SOT-23 Package
This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Tags, SI2366-TP, SI2366, 2366, SI2366 Mosfet, SI2366 N Channel Mosfet, N-Channel Mosfet, 30V N-Channel Mosfet, 5.8A N-Channel Mosfet.
Features/Specs:
- Manufacturer Part No: SI2366DS-T1-GE3
- Manufacturer: Vishay Semiconductors
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 30V
- Continuous Drain Current: 5.8A
- Drain-Source Resistance: 36 mOhms
- Gate-Source Voltage: -20V ~ +20V
- Gate-Source Threshold Voltage: 2.5V
- Gate Charge: 3.2 nC
- Power Dissipation: 2.1W
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 8 ns
- Rise Time: 12 ns
- Typical Turn-Off Delay Time: 14 ns
- Typical Turn-On Delay Time: 5 ns
- Operating Temperature Range: – 55°C ~ +150°C
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
Applications:
- Switching high-power devices
- Control the speed of motors
- LED dimmers or flashers
- High-Speed switching applications
- Converters or Inverter circuits
Datasheet: SI2366DS
Package Includes:
- 1 x SI2366DS-T1-GE3 – 30V 5.8A N-Channel Mosfet – SOT-23 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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