KIA4N65H 650V 4A N-Channel Mosfet – TO-220F Package
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Tags, KIA4N65H, KIA4N65, KIA 4N65, 4N65, 4N65H.
Features:
- RDS(on)=2.5Ω@VGS: 10V
- Low gate charge (Typical6.5nC)
- High ruggedness
- Fasts witching
- 100% avalanche tested
- Improved dv/dt capability
Features/Specs:
- Manufacturer Part No: KIA4N65H
- Manufacturer: KIA
- Product Category: MOSFET
- Mosfet Type: N Channel
- Drain-source voltage: 650V
- Drain current continuous: 4A
- Drain current pulsed: 16A
- Gate-source voltage: ±30 V
- Single Pulse avalanche energy: 180 mJ
- Repetitive avalanche energy: 10 mJ
- Peak diode recovery dv/dt: 4.5 V/ns
- Power dissipation: 34W
- Derate above 25ºC 0.33 W/ºC
- Operating Temperature Range: -55 ~ +150ºC
- Rohs: Yes
- Mounting Style: Through Hole
- Package: TO-220F
Applications:
- DC-DC Converters
- UPS & Monitors
- High Power Switching
Datasheet: KIA4N65H
Package includes:
- 1 x KIA4N65H 650V 4A N-Channel Mosfet – TO-220F Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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