KIA10N65H 650V 10A N-Channel Mosfet – TO-220F Package
The KIA10N65H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high-speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Features:
- RDS(on)=0.65Ω @ VGS=10V
- Low gate charge ( typical 48nC)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
Features/Specs:
- Manufacturer Part No: KIA10N65H
- Manufacturer: KIA
- Product Category: MOSFET
- Mosfet Type: N Channel
- Drain To Source Voltage: 650V
- Continuous Drain Current: @25°C 10A
- Power Dissipation: 52W
- Drain Source Voltage: 650V
- Continuous Drain Current: 10A
- Power Dissipation: 52 Watts
- Drain Source On Resistance: 750mOhms
- Gate Threshold Voltage: 4V @250uA
- Temperature Range: 150°C
- Total Gate Charge: 48nC
- Rise Time: 70nS
- Drain-Source Capacitance: 1665pF
- Rohs: Yes
- Mounting Style: Through Hole
- Package: TO-220F
Applications:
- DC-DC Converters
- UPS & Monitors
- High Power Switching
Datasheet: KIA10N65H
Package includes:
- 1 x KIA10N65H 650V 10A N-Channel Mosfet – TO-220F Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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