STP110N8F6 N-Channel 80V 110A Power Mosfet – TO-220 Package
STP110N8F6 N-Channel 80V 110A Power Mosfet This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Features/Specs:
- Manufacturer: STMicroelectronics
- Manufacturer Part No: STP110N8F6
- Product Type: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 80 V
- Continuous Drain Current: 110 A
- Drain-Source Resistance: 6.5 mOhms
- Gate-Source Voltage: – 20 V, + 20 V
- Gate-Source Threshold Voltage: 2.5 V
- Gate Charge: 150 nC
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: +175°C
- Power Dissipation: 200 W
- Fall Time: 48 ns
- Rise Time: 61 ns
- Transistor Type: 1 N-Channel Power MOSFET
- Typical Turn-Off Delay Time: 162 ns
- Typical Turn-On Delay Time: 24 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Applications:
- DC-DC Converters
- UPS & Monitors
- High Power Switching
Datasheet: STP110N8F6
Package includes:
- 1 x STP110N8F6 N-Channel 80V 110A Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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