IR2110S – 2A High and Low Side Driver – Wide Body SOIC-16 Package
The IR2110 are high voltage, high-speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600 volts.
Features:
- Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Features/Specs:
- Manufacturer Part No: IR2110S
- Manufacturer: Infineon Technologies
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Supply Voltage: 3.3V ~ 20V
- Logic Voltage – VIL, VIH: 6V, 9.5V
- Current – Peak Output: 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage: 500V
- Rise / Fall Time: 25ns, 17ns
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (Wide Body)
Datasheet: IR2110S
Package includes:
- 1x IR2110S – 2A High and Low Side Driver – Wide Body SOIC-16 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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