IRF9Z24 – 60V 11A P-Channel Power Mosfet – TO-220AB-3 Package
The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. IRF9Z24 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Featured by Sharvi Electronics It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency. Tags, IRF9Z24, 844-IRF9Z24PBF, IRF9Z24PBF.
Features/Specs:
- Manufacturer Part No: IRF9Z24NPbF
- Manufacturer: infineon
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 60V
- Continuous Drain Current: 11A
- Drain-Source Resistance: 280 mOhms
- Gate-Source Voltage: -20V, +20V
- Gate-Source Threshold Voltage: 4V
- Gate Charge: 19 nC
- Operating Temperature Range: -55°C ~ 175°C
- Power Dissipation: 2.5 Watts
- Channel Mode: Enhancement
- Series: IRF9Z
- Configuration: Single
- Fall Time: 29 ns
- Rise Time: 68 ns
- Transistor Type: 1 P-Channel
- Typical Turn-Off Delay Time: 15 ns
- Typical Turn-On Delay Time: 13 ns
- Mounting Style: Through Hole
- Package/Case: TO-220AB-3
Datasheet:Â IRF9Z24
Package Includes:
- 1 x IRF9Z24 – 60V 11A P-Channel Power Mosfet – TO-220AB-3 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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