STB28N65M2 – 650V 20A N-Channel Mosfet – TO-220 Package
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Tags, STB28N65M2, STB28N65, 28N65, STB28N65M2 Mosfet, STB28N65M2 20A N-Channel Mosfet, 511-STB28N65M2.
Features:
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
Features/Specs:
- Manufacturer Part No: STB28N65M2
- Manufacturer: STMicroelectronics
- Drain Source Breakdown Voltage: 650V
- Source Drain Current: 20A
- Source Drain Current: 80A
- Forward on Voltage: 1.6V
- Gate Threshold Voltage: 4V
- Reverse Recovery Time: 384ns
- Zero Gate Voltage Drain Current: 100 µA
- Gate Body Leakage Current: ±10µA
- Gate Source Voltage: ±25V
- Continuous Drain Current: 20A @25°C
- Drain Current Pulsed: 80A
- Static Drain Source on-Resistance: 0.18 Ohm
- Total Power Dissipation: 170 Watts
- Peak diode recovery voltage slope: 15 V/ns
Mosfet dv/dt Ruggedness: 50 V/ns - Operating Temperatur: 150°C
- Input Capacitance: 1440pF
- Output Capacitance: 60pF
- Rohs: Yes
- Mounting Style: Through Hole
- Package: TO-220
Applications:
- DC-DC Converters
- UPS & Monitors
- High Power Switching
Datasheet: STB28N65M2
Package includes:
- 1 x STB28N65M2 – 650V 20A N-Channel Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
Reviews
There are no reviews yet.