SI2308DS 60V 2.3A N-Channel Mosfet – SOT-23 Package
This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Tags, SI2308 Mosfet, SI2308 N Channel Mosfet, N-Channel Mosfet, 60V N-Channel Mosfet, 2A N-Channel Mosfe, SI2308BDS-T1-GE3, SI2308BDS-T1-E3, SI2308, SI2308CDS-T1-GE3, SI2308DS-T1-E3
Features/Specs:
- Manufacturer Part No: SI2308DS
- Manufacturer: Vishay
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 60V
- Continuous Drain Current: 2.3 A
- Drain-Source Resistance: 156 mOhms
- Gate-Source Voltage: -20V ~ +20V
- Gate-Source Threshold Voltage: 3V
- Gate Charge: 6.8 nC
- Power Dissipation:1.09W
- Channel Mode: Enhancement
- Configuration: Single
- Operating Temperature Range: – 55°C ~ +150°C
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
Applications:
- Switching high-power devices
- Control the speed of motors
- LED dimmers or flashers
- High-Speed switching applications
- Converters or Inverter circuits
Datasheet: SI2308DS
Package Includes:
- 1 x SI2308DS 60V 2.3A N-Channel Mosfet – SOT-23 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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