MJE350 PNP Bipolar Power Transistor 300V 500mA Package TO-126
MJE350 PNP Bipolar Power Transistor 300V 500mA Package TO-126, the device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. MJE350 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features/Specs:
- Part No: JE350G
- Manufacturer: Onsemi
- PNP, Silicon
- Max Collector Continuous Current: 500 mA
- Max Collector-Emitter Voltage: 300 V
- Max Emitter-Base Voltage: 3 V
- Power Dissipation: 20.8W
- Operating Temperature Range: -65 – 150°C
- DC Current Gain: 30-240
- Mounting Style: Through Hole
- Package: TO−126-3
Datasheet: MJE350 Datasheet
Package Includes:
- 1 x MJE350 PNP Bipolar Power Transistor 300V 500mA Package TO-126
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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