MJE200 NPN Power Transistor – TO-126 Package
MJE200 NPN Power Transistor – TO-126 Package. MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. This product is known as MJE200G Epitaxial Silicon Transistor, MJE200, MJE200 NPN Epitaxial Silicon Transistor, MJE200 Transistor, MJE200G NPN Epitaxial Silicon Transistor, MJE200G Transistor.
Features/Specs:
- Product Type: BJTs – Bipolar Transistors
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 25 V
- Collector- Base Voltage VCBO: 40 V
- Emitter- Base Voltage VEBO: 8 V
- Collector-Emitter Saturation Voltage: 1.8 V
- Maximum DC Collector Current: 5 A
- Power Dissipation: 15 Watt
- Gain Bandwidth Product fT: 65 MHz
- Minimum Operating Temperature: -65°C
- Maximum Operating Temperature: +150°C
- Continuous Collector Current: 5 A
- DC Collector/Base Gain hFE Min: 70
- Mounting Style: Through Hole
- Package/Case: TO-225-3
Package Includes:
- 1 x MJE200 NPN Power Transistor – TO-126 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product.
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