MJD122T4G – 100V 8A NPN Darlington Power Transistor – TO-252 DPAK Package
Darlington Transistors 8A 100V Bipolar Power NPN. Designed for general purpose amplifier and low-speed switching applications.
Features:
- Lead Formed for Surface Mount Applications in Plastic Sleeves
- Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series
- Monolithic Construction With Built−in Base−Emitter Shunt Resistors
- High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
- Epoxy Meets UL 94 V−0 @ 0.125 in
Features/Specs:
- Manufacturer: Onsemi Semiconductor
- Manufacturer Part No: MJD122T4G
- Series: MJD122
- Product Category: Darlington Transistors
- Configuration: Single
- Transistor Polarity: NPN
- Collector-Emitter Voltage: 100V
- Emitter- Base Voltage: 5V
- Collector- Base Voltage: 100V
- Maximum DC Collector Current: 8A
- Maximum Collector Cut-off Current: 10 uA
- Power Dissipation: 20 Watts
- Operating Temperature: -65°C ~ +150°C
- Continuous Collector Current: 8A
- DC Collector/Base Gain hFE Min: 100, 1000
- Mounting Style: SMD/SMT
- Package/Case: TO-252-3 (DPAK)
Datasheet: MJD122T4G – 100V 8A NPN Darlington Power Transistor – TO-252 DPAK Package
Package Includes:
- 1 x MJD122T4G – 100V 8A NPN Darlington Power Transistor – TO-252 DPAK Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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