2SK2611 900V 9A N-Channel Mosfet – TO-3PN-Package
This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switch-mode power supplies. K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switch-mode power supplies. Tags, 2SK2611, 2SK2611 MOSFET, K2611, K2611 MOSFET, K2611 N Channel MOSFET, MOSFET, N Channel MOSFET, Transistor.
Features/Specs:
- Manufacturer Part No: 2SK2611
- Manufacturer: Toshiba
- Model No: K2622
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 900V
- Continuous Drain Current: 9A
- Drain-Source Resistance: 1.1 Ohms
- Gate-Source Voltage: 30V
- Gate Charge: 58 NC
- Operating Temperature Range: -55~150°C
- Power Dissipation:150W
- 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V
- Ultra-low Gate charge(Typical 58nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Package: TO-3PN
Datasheet: K2611
Package includes:
- 1 x 2SK2611 900V 9A N-Channel Mosfet – TO-3PN-Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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