IXTH6N150 High Voltage Power Mosfet

IXTH6N150 High Voltage Power Mosfet

Use Ixys Corporation’s IXTH6N150 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 540000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Advantages:

• Easy to Mount
• Space Savings
• High Power Density

Application:

• High Voltage Power Supplies
• Capacitor-Discharge
• Pulse Circuits

Features/Specs:

• Model No: IXTH6N150
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Drain-Source Voltage: 1500 V
• Maximum Gate-Source Voltage: 20V
• Maximum Gate-Threshold Voltage: 5V
• Maximum Drain Current: 6A
• Maximum Operating Junction Temperature: 150°C
• Rise Time: 1.5nS
• Maximum Drain-Source On-State Resistance: 3.5 Ohm
• Total Gate Charge: 67 nC
• Maximum Power Dissipation:540 Watt
• International Standard Packages
• Molding Epoxies Weet UL 94 V-0
• Flammability Classification
• Fast Intrinsic Diode
• Low Package Inductance
• Package: TO247

Package Includes:

• 1 x IXTH6N150 High Voltage Power Mosfet

Datasheet: IXTH6N150

Note: Product Images are shown for illustrative purposes only and may differ from the actual product.