IRFZ44VS – N – Channel Power MOSFET Transistor TO-263 (D2PAK)
Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
- Maximum Drain Source Voltage: 60V
- Maximum Gate Source Voltage: ±20
- Maximum Continuous Drain Current: 55A
- Ultra-Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Optimized for SMPS Applications
Note: Product Images are shown for illustrative purposes only and may differ from actual product.