IRFBG30 – 1000V 3.1 A N-Channel Power Mosfet – TO-220 Package
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Tags, IRFBG30, IRFBG30PBF, 844-IRFBG30.
Features/Specs:
- Manufacturer Part No: IRFBG30
- Manufacturer: Vishay Semiconductors
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 1 kV
- Continuous Drain Current: 3.1A
- Drain-Source Resistance: 5 Ohms
- Gate-Source Voltage: -20V ~ +20V
- Gate-Source Threshold Voltage: 4V
- Gate Charge: 80 nC
- Operating Temperature: – 55°C ~ +150°C
- Power Dissipation: 125 W
- Channel Mode: Enhancement
- Series: IRFBG
- Configuration: Single
- Fall Time: 29 ns
- Rise Time: 25 ns
- Typical Turn-Off Delay Time: 89 ns
- Typical Turn-On Delay Time: 12 ns
- Mounting Style: Through Hole
- Package/Case: TO-220AB-3
Datasheet: IRFBG30
Package includes:
- 1 x IRFBG30 – 1000V 3.1 A N-Channel Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product
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