IRFBE30 – 800V 4.1Amp N-Channel Power MOSFET – TO-220 Package
The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all
commercial-industrial applications at power dissipation levels to approximately 50 W.
- Part No: IRFBE30
- Dynamic dV/dt rating
- Fast switching
- Drain to Source Voltage (Vdss): 800 V
- Current – Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- 1 x IRFBE30 – 800V 4.1Amp N-Channel Power MOSFET – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product.
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