IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET -TO-220 Package
IRFB4110 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Featured by Sharvi Electronics It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Tags, 100V 180A MOSFET, 100V 180A N Channel Power MOSFET, 100V 180A Power MOSFET, 100V MOSFET, 180A MOSFET, 180A N Channel Power MOSFET, 180A Power MOSFET, Component, IRFB4110PBF, IRFB4110PBF 100V 180A N Channel Power MOSFET, IRFB4110PBF MOSFET, MOSFET, N Channel Power MOSFET, Power MOSFET.
Features/Specs:
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Configuration: Single
- Drain-Source Breakdown Voltage: 100V
- Continuous Drain Current: 180A
- Drain-Source Resistance: 3.7M Ohms
- Gate-Source Voltage: -20 ~ +20V
- Gate-Source Threshold Voltage: 1.8V
- Gate Charge: 150nC
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature: +175°C
- Power Dissipation: 370 Watt
- Packaging: Tube
- Mounting Style: Through Hole
- Package/Case: TO-220-3
- Length: 10mm
- Width: 4.4mm
- Height: 15.65mm
- Approx Weight: 3 gm
Applications:
- High-Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High-Speed Power Switching
- Hard Switched and High-Frequency Circuits
Datasheet: IRFB4110
Package Includes:
- 1 x IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET -TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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