IRF9540N – 100V 23A P-Channel Power MOSFET TO-220 Package
The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features/Specs:
- Part No: IRF9540N
- Manufacturer: Infineon Technologies
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 100 V
- Id – Continuous Drain Current: 23 A
- Power Dissipation: 140 Watts
- Rds On – Drain-Source Resistance: 117 mOhms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Vgs th – Gate-Source Threshold Voltage: 2.4 V
- Qg – Gate Charge: 64.7 nC
- Operating Temperature: -55°C ~ 150°C (TJ)
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
- New high voltage benchmark
- Advanced process technology
- Package / Case: TO-220-3
Datasheet: IRF9540N
Package Includes:
- 1 x IRF9540N – 100V 23A P-Channel Power MOSFET TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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