IRF830 – 500V 4.5A N-Channel Power MOSFET – TO-220 Package
IRF830 – 500 V / 4.5A Amp N-Channel Power MOSFET -TO-220, The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W. IRF820 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features/Specs:
- Product Type: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 500V
- Continuous Drain Current: 4.5A
- Drain-Source Resistance: 1.5 Ohms
- Gate-Source Voltage: -20V, +20V
- Operating Temperature Range: -65°C ~ +150°C
- Power Dissipation: 100 Watts
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 5 ns
- Rise Time: 8 ns
- Typical Turn-On Delay Time: 11.5 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Datasheet: IRF830 – 500V 4.5A N-Channel Power MOSFET – TO-220 Package
Package Includes:
- 1 x IRF830 – 500V 4.5A N-Channel Power MOSFET – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product
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