IRF830 – 500 V / 4.5A Amp N-Channel Power MOSFET -TO-220AB

IRF830 – 500 V / 4.5A Amp N-Channel Power MOSFET -TO-220AB

IRF830 – 500 V / 4.5A Amp N-Channel Power MOSFET -TO-220AB, The best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W. IRF820 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 74 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features/Specs:

• Dynamic dV/dt rating
• N-Channel
• Fast switching
• Max Drain-Source Voltage: 500V
• Max Gate-Source Voltage: + 20V
• Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 4.5A
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS
• Linear Derating Factor: 0.59 W/°C
• Operating Junction and Storage Temperature Range: – 55 to + 150 °C
• Make: Vishay

Datasheet: IRF830 – 500 V 4.5A Amp N-Channel Power MOSFET -TO-220AB