IRF820S N-Channel Power Mosfet – TO-252-3 Package
IRF820S N-Channel Power Mosfet – TO-252-3 Package,Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. This Product is known as IRFR420, FR820, 820 SMD Mosfet, IRFR420 Mosfet, IRF820 Mosfet, IRFR820S, N-Channel Mosfet, IRFR820 N-Channel Mosfet, FR820 N-Channel Mosfet, N-Channel Mosfet
Features:
- Surface mount
- Available in tape and reel
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Features/Specs:
- Manufacturer: Vishay Siliconix
- Manufacturer Part No: IRF820S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current – Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3
Datasheet: IRF820S
Package Includes:
- 1 x IRF820S N-Channel Power Mosfet – TO-252-3 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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