IRF620 – 200V 5.2A N-Channel Power Mosfet – TO-220 Package

IRF620 – 200V 5.2A N-Channel Power Mosfet – TO-220 Package

IRF620 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control

Features/Specs:

• Series: IRF
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Drain-Source Breakdown Voltage: 200 V
• Continuous Drain Current: 5.2 A
• Drain-Source Resistance: 800 mOhms
• Gate-Source Voltage: – 20 V, + 20 V
• Gate-Source Threshold Voltage: 4 V
• Gate Charge: 14 nC
• Operating Temperature Range: -55°C ~ +150°C
• Power Dissipation: 50W
• Channel Mode: Enhancement
• Configuration: Single
• Fall Time: 13 ns
• Rise Time: 22 ns
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 19 ns
• Typical Turn-On Delay Time: 7.2 ns
• Mounting Style: Through Hole
• Package/Case: TO-220AB-3

Application:

• High Current
• High Speed Switching
• Uninterruptible Power Supply (UPS)
• Motor Control
• Audio Amplifiers
• Industrial Actuators

Datasheet: IRF620

Package includes:

• 1 x IRF620 – 200V 5.2A N-Channel Power Mosfet – TO-220 Package

Note: Product Images are shown for illustrative purposes only and may differ from actual product