IRF610 – 200V 3.3A N-Channel Power Mosfet – TO-220 Package
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Tags, 200V 3.3A MOSFET, 200V 3.3A N Channel Power MOSFET, 200V MOSFET, 200V N Channel Power MOSFET, 3.3A MOSFET, 3.3A N Channel Power MOSFET, Component, IRF610, IRF610 200V 3.3A N Channel Power MOSFET, IRF610 MOSFET, MOSFET.
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Features/Specs:
- Drain-source voltage: 200V
- Gate-source voltage: ±20
- Continuous drain current: 10V TC= 25°C
- Pulsed drain current: 10A
- Linear derating factor: 0.29 W/°C
- Single pulse avalanche energy: 64 mJ
- Repetitive avalanche current: 3.3A
- Repetitive avalanche energy: 3.6mJ
- Maximum power dissipation: 36 W
- Peak diode recovery: 5.0 V/ns
- Operating Temperature Range: -55 ~ +150°C
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Applications:
- UPS (Uninterruptable Power Supply)
- Battery charger and management system
- Motor driver circuit
- Telecommunication and computer applications
- Solar UPS
- Fast switching applications
- Switching converter and regulators
Datasheet: IRF610
Package Includes:
- 1 x IRF610 – 200V 3.3A N-Channel Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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