IRF5305S N-Channel Power Mosfet
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application
Features/Specs:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-source voltage: 100V
- Gate-source voltage: ±20
- Continuous drain current: 10~14V
- Pulsed drain current: 56A
- Linear derating factor:0.59W/°C
- Single pulse avalanche energy: 69mJ
- Avalanche current: 14A
- Repetitive avalanche energy: 8.8mJ
- Maximum power dissipation: 88Watt
- Maximum power dissipation: 3.7 Watt
- Peak diode recovery dv/dt: 5.5 V/ns
- Operating junction and storage temperature range:-55 to +175°C
- Package: D2PAKÂ
Package Includes:
- 1 x IRF5305S N-Channel Power Mosfet
Datasheet:Â IRF5305S
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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