This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features/Specs:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- N-Channel
- Fast Switching
- Max Continuous Drain Current: 169A
- Max Continuous Drain Current: 118A
- Max Pulsed Drain Current: 680A
- Max Power Dissipation: 330W
- Operating Junction and -55 to + 175 deg C
Note: Product Images are shown for illustrative purposes only and may differ from actual product
Reviews
There are no reviews yet.