IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power Mosfet – TO-220 Package
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 ontribute to its wide acceptance throughout the industry. Tags, IRF1404PbF
Features/Specs:
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 40V
- Continuous Drain Current: 162 A
- Drain-Source Resistance: 4 mOhms
- Gate-Source Voltage: – 20 V ~ +20V
- Gate Charge: 160 nC
- Operating Temperature Range: – 55°C ~ +175°C
- Power Dissipation: 333 W
- Channel Mode: Enhancement
- Fall Time: 33 ns
- Height: 15.65 mm
- Rise Time: 190 ns
- Typical Turn-Off Delay Time: 46 ns
- Typical Turn-On Delay Time: 17 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
Applications:
- DC to DC converters
- Power supplies
- Solar power supplies
- Battery Chargers
- Applications that require fast switching
- Uninterrupted power supplies
- Battery management system applications
- Motor Driver Circuits
Datasheet: IRF1404
Package Includes:
- 1 x IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from actual product
