IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power Mosfet – TO-220 Package
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Tags, IRF1010E Equivalents IRF1010, IRF1010 MOSFET, IRF1010 N Channel Power MOSFET, MOSFET, N Channel MOSFET, N Channel Power MOSFET, IRF1407, IRFB4110, IRFB4110G, IRFB4115, IRFB4310Z, IRFB4310ZG, IRFB4410.
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Features/Specs:
- Manufacturer Part No: IRF101E
- Manufacturer: Infineon Technologies
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 60V
- Continuous Drain Current: 84A
- Drain-Source Resistance: 12mOhms
- Gate-Source Voltage: 20V
- Gate Charge: 130 nC
- Operating Temperature Range: -55 ~ 150°C
- Power Dissipation: 200W
- Mounting Style: Through Hole
- Package: TO-220
Applications:
- Basically any switching applications
- speed control units
- Lighting systems
- PWM applications
- Relay drivers
- Switch mode power supply
Datasheet: IRF101E
Package Includes:
- 1 x IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power Mosfet – TO-220 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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