IR2111 – Half Bridge Driver IC – DIP-8 Package
The IR2111(S) is a high voltage, high-speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Features/Specs:
- Part No: IR2111
- Gate Type: IGBT, N-Channel MOSFET
- Voltage – Supply: 10V ~ 20V
- Logic Voltage – VIL, VIH : 8.3V, 12.6V
- Current – Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage – Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High side output in phase with input
- Also available LEAD-FREE
- Mounting Type: Through Hole
- Package / Case: 8-DIP
Datasheet: IR2111 – Half Bridge Driver IC Package DIP-8
Package includes:
- 1 x IR2111 – Half Bridge Driver IC – DIP-8 Package
Note: Product Images are shown for illustrative purposes only and may differ from the actual product.
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